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The electrical properties of low pressure chemical vapor deposition Ga doped ZnO thin films depending on chemical bonding configuration

โœ Scribed by Jung, Hanearl; Kim, Doyoung; Kim, Hyungjun

Book ID
122224650
Publisher
Elsevier Science
Year
2014
Tongue
English
Weight
921 KB
Volume
297
Category
Article
ISSN
0169-4332

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Electrical properties of N atomic layer
Electrical properties of N atomic layer doped Si epitaxial films grown by ultraclean low-pressure chemical vapor deposition
โœ Youngcheon Jeong; Masao Sakuraba; Junichi Murota ๐Ÿ“‚ Article ๐Ÿ“… 2005 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 304 KB

Sheet carrier concentration and Hall mobility of the N atomic layer doped Si epitaxial films on Si(1 0 0) were obtained by Hall effect measurement. It is found that the N atoms act as a donor. Donor activation ratio tends to decrease with increasing N amount, and the typical ratio is about 0.4% at t