The electrical characterization of ZnO/GaAs heterojunction diode
β Scribed by Soylu, M.; Al-Ghamdi, A.A.; Al-Hartomy, Omar A.; El-Tantawy, Farid; Yakuphanoglu, F.
- Book ID
- 127268998
- Publisher
- Elsevier Science
- Year
- 2014
- Tongue
- English
- Weight
- 803 KB
- Volume
- 64
- Category
- Article
- ISSN
- 1386-9477
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Nitrogen doped p-ZnO film, with urea as nitrogen source, is fabricated by pulsed laser deposition on well-cleaned p-type (1 0 0) Si substrates. The structural and electrical properties of the p-p heterojunction are investigated by current-voltage (I-V) and capacitance-voltage (C-V) measurements. It
## Abstract nβZnO film grown by electrodeposition (ECD) on pβGaAs substrate was characterized by structural, optical, and electrical techniques. Xβray diffraction (XRD) measurement clearly showed formation of ZnO thin film with a strong __c__βaxis (0002) preferential orientation. Photoluminescence