Nitrogen doped p-ZnO film, with urea as nitrogen source, is fabricated by pulsed laser deposition on well-cleaned p-type (1 0 0) Si substrates. The structural and electrical properties of the p-p heterojunction are investigated by current-voltage (I-V) and capacitance-voltage (C-V) measurements. It
โฆ LIBER โฆ
Electrical characterization of DC sputtered ZnO/p-Si heterojunction
โ Scribed by Yusuf Selim Ocak
- Book ID
- 116608892
- Publisher
- Elsevier Science
- Year
- 2012
- Tongue
- English
- Weight
- 607 KB
- Volume
- 513
- Category
- Article
- ISSN
- 0925-8388
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