Characterization of AZO/p-Si heterojunction prepared by DC magnetron sputtering

✍ Scribed by He Bo; Ma Zhong Quan; Xu Jing; Zhao Lei; Zhang Nan Sheng; Li Feng; Shen Cheng; Shen Ling; Zhou Cheng Yue; Yu Zheng Shan; Yin Yan Ting

• Publisher: Elsevier Science
• Year: 2009
• Tongue: English
• Weight: 408 KB
• Volume: 12
• Category: Article
• ISSN: 1369-8001
• DOI: 10.1016/j.mssp.2009.12.006

✦ Synopsis

Al-doped ZnO (AZO) film was deposited by direct-current (DC) magnetron sputtering on p-Si (1 0 0) wafer to fabricate Al-doped n-ZnO/p-Si heterojunctions. The microstructural, optical and electrical properties of the AZO film were characterized by XRD, SEM; UV-vis spectrophotometer; four-point probe and Hall effect measurement, respectively. Results show that the AZO film is of good quality. The electrical junction properties were investigated by I-V measurement, which reveals that the heterojunction shows rectifying behavior under a dark condition. The ideality factor and the saturation current of this diode are 20.1 and 1.19 Â 10 À 4 A, respectively. The value of I F /I R (I F and I R stand for forward and reverse current, respectively) at 5 V is found to be as high as 19.7. It shows fairly good rectifying behavior, indicating formation of a diode between AZO and p-Si. High photocurrent is obtained under a reverse bias when the crystalline quality of AZO film is good enough to transmit light into p-Si.