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Structural, optical, and electrical properties of n-ZnO/p-GaAs heterojunction

✍ Scribed by Tekmen, Süleyman ;Gür, Emre ;Asıl, Hatice ;Çınar, Kübra ;Coşkun, Cevdet ;Tüzemen, Sebahattin

Publisher
John Wiley and Sons
Year
2010
Tongue
English
Weight
285 KB
Volume
207
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

n‐ZnO film grown by electrodeposition (ECD) on p‐GaAs substrate was characterized by structural, optical, and electrical techniques. X‐ray diffraction (XRD) measurement clearly showed formation of ZnO thin film with a strong c‐axis (0002) preferential orientation. Photoluminescence (PL) measurements showed that the grown film has a strong and narrow ultraviolet (UV) emission indicating high‐quality ZnO thin film. Current–voltage (I–V) measurement of n‐ZnO/p‐GaAs heterojunction shows diode‐like rectifying characteristics with an almost five‐order rectification factor and a turn‐on voltage of 2 V.

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