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The electrical activity of isoelectronic germanium impurities in lead chalcogenides

✍ Scribed by V. F. Masterov; F. S. Nasredinov; S. A. Nemov; P. P. Seregin; A. V. Ermolaev; S. M. Irkaev


Book ID
110119602
Publisher
Springer
Year
1997
Tongue
English
Weight
46 KB
Volume
31
Category
Article
ISSN
1063-7826

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The results are presented of a study of the electrical and optical properties of vacuum evaporated amorphous thin films in the Ge0S0Se system. The effect of Te isoelectronic substitution either completely for S to give Ge 2.5 Te 2.5 Se 95 and Ge 5 Te 5 Se 90 or partially for Se to yield Ge 2.