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The effect of Te isoelectronic substitution on the electrical and optical properties of the Ge—S—Se amorphous chalcogenide system studied in thin films

✍ Scribed by K Sedeek; EA Mahmoud; A Said; AM Nassar

Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
311 KB
Volume
51
Category
Article
ISSN
0042-207X

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✦ Synopsis

The results are presented of a study of the electrical and optical properties of vacuum evaporated amorphous thin films in the Ge0S0Se system. The effect of Te isoelectronic substitution either completely for S to give Ge 2.5 Te 2.5 Se 95 and Ge 5 Te 5 Se 90 or partially for Se to yield Ge 2.

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