The effects of a temperature jump at the growth surface in stagnation flow chemical vapor deposition (CVD) reactors are investigated. General process considerations suggest that neglecting a temperature slip in modeling CVD processes can lead to an over-or under-prediction of the growth if a significant temperature jump is present, and either gas-phase reactions or a gasΒ±surface reaction with a large kinetic energy dependence play important roles in deposition. Relationships for estimating temperature slip are reviewed, as are the mechanisms by which temperature slip can influence the deposition rate. In addition, we investigate three systems, silicon, silicon carbide, and gallium arsenide CVD, for which explicit gas-phase and surface mechanisms exist, to estimate the influence of neglecting the temperature slip. We find that under some common process conditions, temperature jump at the substrate can be greater than 100 K. The effect on the predicted growth rate of a temperature jump of this magnitude is typically in the range 2Β±5 %, depending upon the kinetics of the CVD for the particular species that is deposited. The importance of accurate values of kinetic energy-dependent gasΒ±surface reaction rates is highlighted as a critical factor in the complete evaluation of the effects of temperature slip on growth rates in CVD.