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Effect of temperature on copper indium selenization

โœ Scribed by N. Orbey; H. Hichri; R. W. Birkmire; T. W. F. Russell


Publisher
John Wiley and Sons
Year
1997
Tongue
English
Weight
213 KB
Volume
5
Category
Article
ISSN
1062-7995

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โœฆ Synopsis


The reaction kinetics of copper indium diselenide formation is studied by measuring species composition as a function of time at 2508 8 8C and 3258 8 8C in a tubular chemical vapor deposition reactor. This extends our previous modeling and experimental study at 4008 8 8C. The initial copperยฑindium alloy is analyzed at the reaction temperatures using high-temperature X-ray diraction measurements. This modiยฎes the understanding of the chemistry of the copper indium growth kinetics and a new set of model equations is presented. The speciยฎc reaction rate constants and activation energies for the chemical reactions are obtained, enabling one to calculate the holding time for the reaction.


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The effects of a temperature jump at the growth surface in stagnation flow chemical vapor deposition (CVD) reactors are investigated. General process considerations suggest that neglecting a temperature slip in modeling CVD processes can lead to an over-or under-prediction of the growth if a signifi