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THE EFFECTS OF PB EXCESS AND FREQUENCY ON POLARIZATION-VOLTAGE HYSTERESIS LOOPS IN Pb(Zr 0.3 Ti 0.7 )O 3 THIN FILMS

โœ Scribed by CHEN, Z. H.; JIANG, A. Q.; TANG, T. A.

Book ID
127072166
Publisher
Taylor and Francis Group
Year
2010
Tongue
English
Weight
270 KB
Volume
113
Category
Article
ISSN
1058-4587

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โœ Zhen-Kui Shen; Zhi-Hui Chen; Zhi-Jun Qiu; Bing-rui Lu; Jing Wan; Shao-Ren Deng; ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 456 KB

The ferroelectric random access memory (FRAM) which uses ferroelectric thin film as memory material is considered to be a candidate for the next generation memory application. In this work, we apply nanoembossing technology to fabricate Pb(Zr 0.3 ,Ti 0.7 )O 3 (PZT) ferroelectric thin film nanostruct