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The effects of oxygen implantation on n-type layers formed by silicon implantation in gallium arsenide

โœ Scribed by N.J. Whitehead; B.J. Sealy


Book ID
118361553
Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
315 KB
Volume
33
Category
Article
ISSN
0038-1101

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Optical effects of doped top layers in s
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Arsenic ions were implanted into silicon-on-insulator (SOl) structures at an incident energy of 100 keV to a dose of 2 x 10 lscm-z. Conductive top layers were formed in the SOl structures after annealing at 1200 ~ for 20 s. Infrared reflection spectra in the wave number range of 1500-5000 cm -1 were