✦ LIBER ✦

Effects of predoping and implantation conditions on diffusion of silicon in gallium arsenide subjected to electron-beam annealing

✍ Scribed by M. V. Ardyshev; V. M. Ardyshev; Yu. Yu. Kryuchkov

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Effect of ionization on the behavior of

✍ M. V. Ardyshev; V. M. Ardyshev 📂 Article 📅 2002 🏛 Springer 🌐 English ⚖ 48 KB

Effect of radiation annealing on activat

✍ V. M. Ardyshev; M. V. Ardyshev 📂 Article 📅 1998 🏛 Springer 🌐 English ⚖ 226 KB

The use of Hall effect profiling to moni

📂 Article 📅 1990 🏛 Elsevier Science 🌐 English ⚖ 236 KB

The effects of incomplete annealing on t

📂 Article 📅 1976 🏛 Elsevier Science 🌐 English ⚖ 124 KB