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The effects of neutron irradiation and low temperature annealing on the electrical properties of highly doped 4H silicon carbide

✍ Scribed by Ekrem Almaz; Stephen Stone; Thomas E. Blue; Joseph P. Heremans

Publisher: Elsevier Science
Year: 2010
Tongue: English
Weight: 660 KB
Volume: 622
Category: Article
ISSN: 0168-9002
DOI: 10.1016/j.nima.2010.06.211

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