We report on the effects of RCA leaching of glass substrates on the performance and hot-carrier reliability of n-channel and p-channel polycrystalline silicon (poly-Si) thin-film transistors (TFTs). The characteristics of the TFTs on RCA-treated glass are contrasted to those of TFTs on untreated gla
✦ LIBER ✦
The effects of glass-substrate’s surface-treatment on the characteristics of N-channel polycrystalline silicon thin film transistors
✍ Scribed by Y. Z. Wang; O. O. Awadelkarim
- Publisher
- Springer US
- Year
- 1998
- Tongue
- English
- Weight
- 110 KB
- Volume
- 27
- Category
- Article
- ISSN
- 0361-5235
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