The e β ect of di β erent polarization orientations of the excitation source on the Raman and photoluminescence (PL) spectra of a porous silicon (PS) layer within two di β erent micro-regions was investigated. Two micro-regions (2 lm) along the (100) direction were studied, close to the crystalline sil
β¦ LIBER β¦
The effects of chemical etching of porous silicon on Raman spectra
β Scribed by Masato Ohmukai; Nobutomo Uehara; Tetsuya Yamasaki; Yasuo Tsutsumi
- Book ID
- 111577090
- Publisher
- Springer
- Year
- 2004
- Tongue
- English
- Weight
- 213 KB
- Volume
- 54
- Category
- Article
- ISSN
- 0011-4626
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