Relaxation spectra of photoluminescence from porous silicon obtained by chemical etching of laser-modified silicon
✍ Scribed by L. L. Fedorenko; A. D. Sardarly; É. B. Kaganovich; S. V. Svechnikov; S. P. Dikii; S. V. Baranets
- Book ID
- 110119708
- Publisher
- Springer
- Year
- 1997
- Tongue
- English
- Weight
- 87 KB
- Volume
- 31
- Category
- Article
- ISSN
- 1063-7826
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We have fabricated porous silicon layers (PSLs) in the anodizing solution, HF(48wt.\%): \(\mathrm{H}_{2} \mathrm{O}=1: 1\). After anodization, the PSL was etched in the same chemical solution as used for anodization and then illuminated with the \(476.5 \mathrm{~nm}\) line, with a power of \(20 \mat
## Abstract Samples containing silicon nanowires (Si‐NWs) and highly porous structures (P‐Si) were prepared by electroless wet chemical etching (EWCE) of crystalline silicon wafers using various etching parameters. Photoluminescence (PL) measurements were performed with excitation at 488 nm and a p