In this work thin silver (Ag) films are grown employing high power pulsed magnetron sputtering (HPPMS) for various pulse on/off time configurations, as well as by dc magnetron sputtering (dcMS), for reference. It is shown that the increase of the pulse off-time from 450 μs to 3450 μs, while the pulse on-time is kept constant at 50 μs, results in an increase of the peak target current (I Tp ) from 3 A to 22 A. The increase of I Tp is accompanied by an increase of the ion flux towards the growing film. This is particularly pronounced for I Tp N 11 A. The microstructure, the surface topography and the electrical properties of Ag films grown at I Tp = 11 A, I Tp = 22 A and by dcMS are investigated, as a function of the film thickness d. It is shown that for d N 20 nm the electrical resistivity of films sputtered at I Tp = 22 A is similar to that of films grown by dcMS. Slightly higher values are measured for films grown at I Tp = 11 A. It is found that in this thickness range the film conductivity is strongly affected by the vertical grain size and the scattering of the charged carriers at the film interfaces. For d b 15 nm the resistivity of films deposited at I Tp = 22 A is substantially lower as compared to that of films grown by dcMS. Films deposited at I Tp = 11 A exhibit also in this case a higher conductivity. In this thickness regime the electronic transport and, thus the conductivity are profoundly determined by the surface topography and the film density.