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The effect of the hydrogen carrier gas flow rate on the electrical properties of epitaxial GaAs prepared in a hydride system

✍ Scribed by J.K. Kennedy; W.D. Potter; D.E. Davies

Publisher: Elsevier Science
Year: 1974
Tongue: English
Weight: 533 KB
Volume: 24-25
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(74)90310-8

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