The Effect of the H2 Flow Rate on the Deposition of TiO2 Film Produced by Inductively Coupled Plasma-Assisted CVD

✍ Scribed by Dong-Su Jang; Soon-Ho Kwon; Hee-Yong Lee; Won-Kyun Yang; Jung-Joong Lee

• Publisher: John Wiley and Sons
• Year: 2009
• Tongue: English
• Weight: 504 KB
• Volume: 15
• Category: Article
• ISSN: 0948-1907
• DOI: 10.1002/cvde.200806765

✦ Synopsis

Abstract

Titanium dioxide (TiO~2~) films are produced by inductively coupled plasma‐assisted (ICP) CVD at various H~2~ flow rates. Anatase and rutile TiO~2~ films are obtained without any external heating. The surface morphologies, structures, and deposition rates of the TiO~2~ films are strongly affected by the H~2~ flow rate. By plasma diagnostics, using a single Langmuir probe (SLP) and optical emission spectroscopy (OES), it is found that the amount of H~2~ plays a dominant role in determining the deposition rate of the TiO~2~ films, while the substrate temperature or plasma density do not appreciably affect the deposition rate.