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The effect of substrate surface roughness on GaN growth using MOCVD process

โœ Scribed by Dongwha Kum; Dongjin Byun


Book ID
107457430
Publisher
Springer US
Year
1997
Tongue
English
Weight
152 KB
Volume
26
Category
Article
ISSN
0361-5235

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Buffer free MOCVD growth of GaN on 4H-Si
โœ Losurdo, Maria ;Giangregorio, Maria M. ;Bruno, Giovanni ;Kim, Tong-Ho ;Choi, Soo ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 684 KB

## Abstract GaN has been grown directly on the Siโ€face 4Hโ€SiC(0001) substrates using remote plasmaโ€assisted metalorganic chemical vapour deposition (RPโ€MOCVD) with UVโ€light irradiation. The effects of substrate preโ€treatments and UVโ€photoirradiation of the growth surface on GaN nucleation and film