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The effect of series resistance on calculation of the interface state density distribution in Schottky diodes

✍ Scribed by Ayyildiz, E.; Temirci, C.; Bati, B.; TÜrÜt, A.

Book ID
126629012
Publisher
Taylor and Francis Group
Year
2001
Tongue
English
Weight
177 KB
Volume
88
Category
Article
ISSN
0020-7217

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Nickel-silicided/Si 1Àx Ge x Schottky junctions are fabricated by annealing the deposited nickel (Ni) film on relaxed Si 0.75 Ge 0.25 layer at a temperature range of 300-900 1C for 60 s. Energy dispersive spectroscopy (EDS) was used to quantify the Ge composition in silicide/germanosilicide grains,