The formation of titanium disilicide (TiSi ) from Ti deposited using ionized metal plasma under different 2 deposition conditions has been investigated. It is shown that deposition at elevated substrate temperature (4508C) enhances the formation of the low-resistivity C54 TiSi , especially in patter
The effect of scaling on contact and interconnect properties with sputtered TiSi2 metallization
β Scribed by RK Nahar; PD Vyas
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 532 KB
- Volume
- 44
- Category
- Article
- ISSN
- 0042-207X
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