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The effect of randomness in the distribution of impurity atoms on FET thresholds

✍ Scribed by Robert W. Keyes

Publisher
Springer
Year
1975
Tongue
English
Weight
752 KB
Volume
8
Category
Article
ISSN
1432-0630

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πŸ“œ SIMILAR VOLUMES

On the distribution of impurity atoms in
On the distribution of impurity atoms in the stress field of a dislocation
✍ D.N Beshers πŸ“‚ Article πŸ“… 1958 πŸ› Elsevier Science βš– 339 KB

It is shown that impurity atoms distributed in the stress field of a dislocation obey Fermi-Dime statistics. This result is applied to two experimental situations. In the first o&se, it enables us to determine the binding energy of an impurity to a dislocation, and in the second we see why another a