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The effect of production conditions for in situ phosphorus-doped LPCVD polysilicon in monosilane/phosphine system on the deposition process kinetics

✍ Scribed by A.S. Turtsevich; V.Y. Krasnitsky; V.A. Emelyanov; O.Y. Nalivaiko; S.V. Kravtsov

Publisher: Elsevier Science
Year: 1994
Tongue: English
Weight: 267 KB
Volume: 248
Category: Article
ISSN: 0040-6090
DOI: 10.1016/0040-6090(94)90205-4

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