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On chemical kinetics of silicon deposition from silane (IV). In-situ phosphorus doping of LPCVD poly silicon in the temperature range 900–950 K

✍ Scribed by Dr. H. Kühne; H. Harnisch; Dr. G. Nüske


Publisher
John Wiley and Sons
Year
1990
Tongue
English
Weight
376 KB
Volume
25
Category
Article
ISSN
0232-1300

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