𝔖 Bobbio Scriptorium
✦   LIBER   ✦

The effect of oxygen in Ru gate electrode on effective work function of Ru/HfO2 stack structure

✍ Scribed by T. Nabatame; K Segawa; M. Kadoshima; H. Takaba; K. Iwamoto; S. Kimura; Y. Nunoshige; H. Satake; T. Ohishi; Akira Toriumi

Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
276 KB
Volume
9
Category
Article
ISSN
1369-8001

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Effect of the work function of gate elec
Effect of the work function of gate electrode on hysteresis characteristics of organic thin-film transistors with Ta2O5/polymer as gate insulator
✍ Chunhong Li; Feng Pan; Xiujin Wang; Lijuan Wang; He Wang; Haibo Wang; Donghang Y πŸ“‚ Article πŸ“… 2009 πŸ› Elsevier Science 🌐 English βš– 495 KB

Organic thin-film transistors (OTFTs) using high dielectric constant material tantalum pentoxide (Ta 2 O 5 ) and benzocyclobutenone (BCBO) derivatives as double-layer insulator were fabricated. Three metals with different work function, including Al (4.3 eV), Cr (4.5 eV) and Au (5.1 eV), were employ