The effect of ion implantation on luminescence of a silica
โ Scribed by Yukihiro Morimoto; Robert A. Weeks; Alan V. Barnes; Norman H. Tolk; Raymond A. Zuhr
- Book ID
- 115990752
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 607 KB
- Volume
- 196
- Category
- Article
- ISSN
- 0022-3093
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## Abstract Thermally oxidized SiO~2~ layers have been implanted by oxygen and sulfur ions up to an atomic dopant fraction of about 4 at%. The cathodoluminescence spectra of these ion implanted layers show besides the characteristic bands an identical sharp and intensive multimodal structure in the
The influence of C, N, O, Mg, Si and co-implants (Mg+Si) ions implantation with fluences in the wide range 10 13 -10 17 cm ร2 on the yellow luminescence (YL) properties of wurtzite GaN has been studied by photoluminescence (PL) spectroscopy. Two types of n-type GaN samples grown by metal-organic che