## Abstract Thermally oxidized SiO~2~ layers have been implanted by oxygen and sulfur ions up to an atomic dopant fraction of about 4 at%. The cathodoluminescence spectra of these ion implanted layers show besides the characteristic bands an identical sharp and intensive multimodal structure in the
Multimodal luminescence spectra of ion-implanted silica
โ Scribed by H. -J. Fitting; Roushdey Salh; B. Schmidt
- Book ID
- 111443763
- Publisher
- Springer
- Year
- 2007
- Tongue
- English
- Weight
- 211 KB
- Volume
- 41
- Category
- Article
- ISSN
- 1063-7826
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## Abstract Scanning electron microscopy (SEM) and cathodoluminescence (CL) in combination with scanning transmission electron microscopy (STEM) have been used to investigate thermally grown amorphous silicon dioxide layers implanted isoelectronically with group IV ions (C^+^, Si^+^, Ge^+^, Sn^+^,
## Abstract Thermally wet oxidized SiO~2~ layers of 500 nm thickness have been implanted by sulfur ions of energy 150 keV and a dose 5 ร 10^16^ ions/cm^2^ leading to an atomic dopant fraction of 4 at% at a mean depth of 190 nm. The cathodoluminescence spectra of these sulfur implanted SiO~2~ layers