Multimodal luminescence spectra of ion-implanted silica
β Scribed by Fitting, H.-J. ;Salh, Roushdey ;Barfels, T. ;Schmidt, B.
- Book ID
- 105363402
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 198 KB
- Volume
- 202
- Category
- Article
- ISSN
- 0031-8965
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β¦ Synopsis
Abstract
Thermally oxidized SiO~2~ layers have been implanted by oxygen and sulfur ions up to an atomic dopant fraction of about 4 at%. The cathodoluminescence spectra of these ion implanted layers show besides the characteristic bands an identical sharp and intensive multimodal structure in the green up to near IR region. The energy step differences of the luminescence sublevels in average amount to 120 meV and indicate vibronic transitions in terms of a configuration coordinate potential model. A most probable candidate for these spectra are O~2~^β^ interstitial molecules, as we could demonstrate by respective configuration coordinate data. These assumptions are contrary to photonic crystal models for the multimodal spectra as well as to models of quantum size effects, both discussed recently in literature. (Β© 2005 WILEYβVCH Verlag GmbH & Co. KGaA, Weinheim)
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## Abstract Scanning electron microscopy (SEM) and cathodoluminescence (CL) in combination with scanning transmission electron microscopy (STEM) have been used to investigate thermally grown amorphous silicon dioxide layers implanted isoelectronically with group IV ions (C^+^, Si^+^, Ge^+^, Sn^+^,
## Abstract Thermally wet oxidized SiO~2~ layers of 500 nm thickness have been implanted by sulfur ions of energy 150 keV and a dose 5 Γ 10^16^ ions/cm^2^ leading to an atomic dopant fraction of 4 at% at a mean depth of 190 nm. The cathodoluminescence spectra of these sulfur implanted SiO~2~ layers