✦ LIBER ✦

The effect of internal fields on tunneling current in strained GaN/AlxGa1−xN(0001) structures

✍ Scribed by S. N. Grinyaev; A. N. Razzhuvalov

Book ID: 110134184
Publisher: Springer
Year: 2003
Tongue: English
Weight: 81 KB
Volume: 37
Category: Article
ISSN: 1063-7826
DOI: 10.1134/1.1568463

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

The electric field effect on binding ene

The electric field effect on binding energy of hydrogenic impurity in zinc-blende GaN/AlxGa1−xN spherical quantum dot

✍ Huiting Wu; Hailong Wang; Liming Jiang; Qian Gong; Songlin Feng 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 233 KB

The effect of barrier strain on the reli

The effect of barrier strain on the reliability of Inx Al1–xN/AlN/GaN heterostructure field-effect transistors

✍ Cemil Kayis; Romualdo A. Ferreyra; Congyong Zhu; Vitaliy Avrutin; Ümit Özgür; Ha 📂 Article 📅 2012 🏛 John Wiley and Sons 🌐 English ⚖ 522 KB

Influence of the built-in electric field

Influence of the built-in electric field on luminescent properties in self-formed single-GaN/AlxGa1−xN quantum dots

✍ X. Zhao; S.Y. Wei; C.X. Xia 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 174 KB

Based on the framework of effective-mass approximation and variational approach, the luminescent properties are investigated theoretically in self-formed wurtzite GaN/Al x Ga 1Àx N single-quantum dots (QDs). Considering the three-dimensional (3D) confinement of electron and hole pair and the strong

Effects of a cap layer on built-in elect

Effects of a cap layer on built-in electric fields of AlxGa1-xN/GaN heterostructures non-destructively probed by Franz-Keldysh oscillations

✍ H. Takeuchi; Y. Yamamoto; Y. Kamo; T. Oku; M. Nakayama 📂 Article 📅 2006 🏛 Springer 🌐 English ⚖ 198 KB

SIMS investigations into the effect of g

SIMS investigations into the effect of growth conditions on residual impurity and silicon incorporation in GaN and AlxGa1−xN

✍ G. Parish; S. Keller; S. P. Denbaars; U. K. Mishra 📂 Article 📅 2000 🏛 Springer US 🌐 English ⚖ 299 KB

Effects of the passivation of SiNx with

Effects of the passivation of SiNx with various growth stoichiometry on the high temperature transport properties of the two-dimensional electron gas in AlxGa1−xN/GaN heterostructures

✍ M.J. Wang; B. Shen; F.J. Xu; Y. Wang; J. Xu; S. Huang; Z.J. Yang; Z.X. Qin; G.Y. 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 245 KB