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Effects of the passivation of SiNx with various growth stoichiometry on the high temperature transport properties of the two-dimensional electron gas in AlxGa1−xN/GaN heterostructures

✍ Scribed by M.J. Wang; B. Shen; F.J. Xu; Y. Wang; J. Xu; S. Huang; Z.J. Yang; Z.X. Qin; G.Y. Zhang


Book ID
108240917
Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
245 KB
Volume
369
Category
Article
ISSN
0375-9601

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The behavior of two-dimensional electron gas density, induced by spontaneous and piezoelectric polarization, in non-intentionally doped GaN=AlxGa1-xN=GaN heterostructures with very thin barriers has been studied. The sheet carrier concentration, Ns, induced by polarization charges was determined sel