We present a review of published work concerning the effect of In and N compositions on the operation wavelength, optical quality and lasing threshold in Ga x In 1-x As 1-y N y /GaAs QW and double heterostructure lasers. We show that the emission wavelength in the range between 1.0 and 1.4 Β΅m can be
β¦ LIBER β¦
The effect of interface quality on Si  /  SiO2resonant tunnel diodes
β Scribed by T. Sandu; R. Lake; W.P. Kirk
- Publisher
- Elsevier Science
- Year
- 2001
- Tongue
- English
- Weight
- 111 KB
- Volume
- 30
- Category
- Article
- ISSN
- 0749-6036
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