The effect of inserting strain-compensated GaNAs layers on the luminescence properties of GaInNAs/GaAs quantum well

✍ Scribed by L.F. Bian; D.S. Jiang; S.L. Lu; J.S. Huang; K. Chang; L.H. Li; J.C. Harmand

• Book ID: 108341868
• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 176 KB
• Volume: 250
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/s0022-0248(02)02464-8