𝔖 Bobbio Scriptorium
✦   LIBER   ✦

The Influence of Nitrogen Clustering Effect on Optical Transitions in GaInNAs/GaAs Quantum Wells

✍ Scribed by Desheng Jiang; Xiaogan Liang; Baoquan Sun; Lifeng Bian; Lianhe Li; Zhong Pan; Ronghan Wu

Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
240 KB
Volume
0
Category
Article
ISSN
1862-6351

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

The nature of optical transitions in Ga0
The nature of optical transitions in Ga0.64In0.36As1βˆ’xNx/GaAs single quantum wells with low nitrogen content (x≀0.008)
✍ R. Kudrawiec; G. SΔ™k; K. Ryczko; J. Misiewicz; P. Sundgren; C. Asplund; M. Hamma πŸ“‚ Article πŸ“… 2003 πŸ› Elsevier Science 🌐 English βš– 151 KB

Ga 0:64 In 0:36 As 12x N x =GaAs single quantum wells (SQWs) with low nitrogen content have been investigated by both photoluminescence (PL) and photoreflectance (PR) at low and room temperatures. A huge broadening of the PR features has been observed at low temperature and a decrease in this broade

Effect of electric field on the probabil
Effect of electric field on the probability of optical transitions in InGaAs/GaAs quantum wells observed by photo- and electroreflectance methods
✍ Pikhtin, A. N. ;Komkov, O. S. ;Bugge, F. πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 234 KB

## Abstract The influence of an electric field on the energy spectrum and the probability of optical transitions in InGaAs/GaAs single quantum wells (QWs) of different widths has been investigated with photo‐ and electroreflectance techniques. The electric field in the area of a QW is varied in a w

Influence of the cap layer thickness on
Influence of the cap layer thickness on the optical properties of near surface GaInAs/GaAs quantum wells
✍ J. Dreybrodt; F. Faller; A. Forchel; J.P. Reithmaier πŸ“‚ Article πŸ“… 1993 πŸ› Elsevier Science 🌐 English βš– 280 KB

We present photoluminescence investigations of GalnAs/GaAs quantum wells with thin cap layers ranging from 20 nm in thickness down to a complete cap layer removal. We observe a strong blue shift of up to 35 meV for an uncovered surface quantum well. A further shift up to the GaAs band edge can be ob