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The effect of high-temperature epitaxial SiC layer growth on the structure of porous silicon carbide

โœ Scribed by N. S. Savkina; V. V. Ratnikov; V. B. Shuman

Book ID
110126165
Publisher
Springer
Year
2001
Tongue
English
Weight
205 KB
Volume
35
Category
Article
ISSN
1063-7826

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โœ J.H. Park; W.C. Mitchel; L. Grazulis; K. Eyink; H.E. Smith; J.E. Hoelscher ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 896 KB

An extended layer of defected SiC has been observed in SiC subjected to heat treatments at 850 and 1050 ยฐC prior to growth of graphene by thermal decomposition. This layer is found to strongly affect the graphene thickness, surface morphology, and Raman spectrum of graphene grown on it. By comparing