The effect of Ge addition on the RESET operation of a phase-change memory (PCM) device using Ge-doped SbTe

✍ Scribed by Young-wook Park; Hyun Seok Lee; Hyung Woo Ahn; Zhe Wu; Suyoun Lee; Jeung-hyun Jeong; Doo Seok Jeong; Kyung-woo Yi; Byung-ki Cheong

• Book ID: 108079315
• Publisher: Elsevier Science
• Year: 2010
• Tongue: English
• Weight: 485 KB
• Volume: 10
• Category: Article
• ISSN: 1567-1739
• DOI: 10.1016/j.cap.2009.12.019