Modified write-and-verify scheme for improving the endurance of multi-level cell phase-change memory using Ge-doped SbTe

✍ Scribed by Zhang, Gang; Wu, Zhe; Jeong, Jeung-hyun; Jeong, Doo Seok; Yoo, Won Jong; Cheong, Byung-ki

• Book ID: 118203158
• Publisher: Elsevier Science
• Year: 2012
• Tongue: English
• Weight: 246 KB
• Volume: 76
• Category: Article
• ISSN: 0038-1101
• DOI: 10.1016/j.sse.2012.06.003