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The effect of built-in electric field in GaN/AlGaN quantum wells with high AIN mole fraction

✍ Scribed by H. M. Ng; R. Harel; S. N. G. Chu; A. Y. Cho

Book ID
107452587
Publisher
Springer US
Year
2001
Tongue
English
Weight
190 KB
Volume
30
Category
Article
ISSN
0361-5235

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