The depth resolution of sputter profiling
β Scribed by H. H. Andersen
- Publisher
- Springer
- Year
- 1979
- Tongue
- English
- Weight
- 887 KB
- Volume
- 18
- Category
- Article
- ISSN
- 1432-0630
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π SIMILAR VOLUMES
## Abstract A very simplified model of atomicβscale etch pitting during sputtering erosion for composition depth profiling is used to modify the BenninghovenβHofmann approach to layerβbyβlayer sputtering. It is shown that analytically tractable defining equations result, with solutions that indicat
## Abstract To study the factors limiting the depth resolution of sputter depth profiling, we have examined the influence of ion mixing, ion beamβinduced roughness and temperature on the interface resolution of metallic bilayers consisting of Pt on top of Ni or Ti. We studied Pt/Ni and Pt/Ti interf