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The deposition of SiGe strained layers from GeH4, SiH2Cl2, SiH4 and Si2H6

✍ Scribed by D.J. Meyer; T.I. Kamins

Publisher: Elsevier Science
Year: 1992
Tongue: English
Weight: 242 KB
Volume: 222
Category: Article
ISSN: 0040-6090
DOI: 10.1016/0040-6090(92)90032-7

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