Kinetics and mechanisms of surface reactions in epitaxial growth of Si from SiH4 and Si2H6
โ Scribed by S.M. Gates
- Publisher
- Elsevier Science
- Year
- 1992
- Tongue
- English
- Weight
- 550 KB
- Volume
- 120
- Category
- Article
- ISSN
- 0022-0248
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Phenyl isonitrile reacls with trialkylboron compounds in ether at room temperature to yield ti new boron-nitrogen heterocycle, viz. 2,S-diboradihydropyra/.inc (I).
High-resolution (0.05 eV) Si 2p pre-edge photoabsorption spectra of SiH,, SiD,, S&H6 and S&Ha have been recorded. The spectra show a large number of peaks due to Si 2pdRydberg transitions, along with rich vibrational structure. The spectrum of SiD4 has been very useful in determining the exact posit
Ab initio coupled Hartree-Fock perturbation theory (CHFPT) using large, flexible bases of gaugeless Gaussian orbitals is used to calculate the %i chemical shielding tensors, o,,, of SiH4, Si2H6, SiZH4 and Hr.Si0.'Si2H4 is deshielded with respect to SiH, by an average of 134 ppm and the range of prin
Reaction rate constartls of SiHI(%'At) have been directly measured for the first time using the laser photolysis-laser-induced fluorescence method. The preparation of SiH: radical in the laser photolysis (193 m-n) or phenylsilane and the concentration of the radiczd is demonstrated by a dye laser at