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The dependence of barrier height on temperature for Pd Schottky contacts on ZnO

✍ Scribed by W. Mtangi; F.D. Auret; C. Nyamhere; P.J. Janse van Rensburg; A. Chawanda; M. Diale; J.M. Nel; W.E. Meyer

Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
261 KB
Volume
404
Category
Article
ISSN
0921-4526

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πŸ“œ SIMILAR VOLUMES

Analysis of temperature dependent measur
Analysis of temperature dependent measurements on Pd/ZnO Schottky barrier diodes and the determination of the Richardson constant
✍ W. Mtangi; F.D. Auret; C. Nyamhere; P.J. Janse van Rensburg; M. Diale A.; Chawan πŸ“‚ Article πŸ“… 2009 πŸ› Elsevier Science 🌐 English βš– 455 KB

Temperature dependent current-voltage Γ°I2VÞ and Hall measurements were performed on Pd/ZnO Schottky barrier diodes in the range 20-300 K. The apparent Richardson constant was found to be 8:60 Γ‚ 10 Γ€9 A K Γ€2 cm Γ€2 in the 60-160 K temperature range, and mean barrier height of 0.50 eV in the 180-300 K

On barrier height inhomogeneities of Au
On barrier height inhomogeneities of Au and Cu/n-InP Schottky contacts
✍ H. Γ‡etin; E. Ayyildiz πŸ“‚ Article πŸ“… 2010 πŸ› Elsevier Science 🌐 English βš– 258 KB

In this work, barrier height inhomogeneity and its origin are investigated for Au and Cu/n-InP metal/ semiconductor contacts. The effective barrier height values of the Au and Cu/n-InP Schottky barrier diodes (SBDs) have been obtained as 0.480 and 0.404 eV from current-voltage (I-V) characteristics