𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Schottky barrier height of sputtered TiN contacts on silicon

✍ Scribed by M. Finetti; I. Suni; M. Bartur; T. Banwell; M-A. Nicolet

Publisher
Elsevier Science
Year
1984
Tongue
English
Weight
616 KB
Volume
27
Category
Article
ISSN
0038-1101

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

On barrier height inhomogeneities of Au
On barrier height inhomogeneities of Au and Cu/n-InP Schottky contacts
✍ H. Γ‡etin; E. Ayyildiz πŸ“‚ Article πŸ“… 2010 πŸ› Elsevier Science 🌐 English βš– 258 KB

In this work, barrier height inhomogeneity and its origin are investigated for Au and Cu/n-InP metal/ semiconductor contacts. The effective barrier height values of the Au and Cu/n-InP Schottky barrier diodes (SBDs) have been obtained as 0.480 and 0.404 eV from current-voltage (I-V) characteristics