Analysis of temperature dependent measurements on Pd/ZnO Schottky barrier diodes and the determination of the Richardson constant

✍ Scribed by W. Mtangi; F.D. Auret; C. Nyamhere; P.J. Janse van Rensburg; M. Diale A.; Chawanda

• Publisher: Elsevier Science
• Year: 2009
• Tongue: English
• Weight: 455 KB
• Volume: 404
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2008.11.022

✦ Synopsis

Temperature dependent current-voltage ðI2VÞ and Hall measurements were performed on Pd/ZnO Schottky barrier diodes in the range 20-300 K. The apparent Richardson constant was found to be 8:60 Â 10 À9 A K À2 cm À2 in the 60-160 K temperature range, and mean barrier height of 0.50 eV in the 180-300 K temperature range. After barrier height inhomogeneities correction, the Richardson constant and the mean barrier height were obtained as 167 A K À2 cm À2 and 0.61 eV in the temperature range 80-180 K, respectively. A defect level with energy at 0.12 eV below the conduction band was observed using the saturation current plot and ð0:11 AE 0:01Þ eV using deep level transient spectroscopy measurements.