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The defect structure of GaAs after selenium implantation through a Si3N4layer

✍ Scribed by P. W. Hutchinson; R. K. Ball; P. S. Dobson; P. Leigh

Publisher: Springer
Year: 1982
Tongue: English
Weight: 1003 KB
Volume: 1
Category: Article
ISSN: 0261-8028
DOI: 10.1007/bf00721928

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