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The defect structure of Te-doped GaAs after cadmium diffusion

โœ Scribed by R. K. Ball; P. S. Dobson


Publisher
Springer
Year
1982
Tongue
English
Weight
292 KB
Volume
1
Category
Article
ISSN
0261-8028

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Defect Structure in Te-doped GaAs single
โœ Prof. Dr. Peter Paufler; Dr. Gerald Wagner; Dipl.-Krist. Katrin Grosse ๐Ÿ“‚ Article ๐Ÿ“… 1993 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 523 KB

## Twins and Stacking Faults At temperatures above the brittle-to-ductile transition (490 "C) in Te-doped GaAs three types of predominant defect configurations have been observed after uniaxial compression along a [00 11 direction: (i) twins and stacking faults (500 ..\_ 520 "C), (ii) slip zones o