Defect Structure in Te-doped GaAs single
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Prof. Dr. Peter Paufler; Dr. Gerald Wagner; Dipl.-Krist. Katrin Grosse
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Article
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1993
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John Wiley and Sons
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English
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## Twins and Stacking Faults At temperatures above the brittle-to-ductile transition (490 "C) in Te-doped GaAs three types of predominant defect configurations have been observed after uniaxial compression along a [00 11 direction: (i) twins and stacking faults (500 ..\_ 520 "C), (ii) slip zones o