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The role of implanted hydrogen in annihilation of radiation induced charges in Si3N4-SiO2-Si and ZnO-Si3N4-SiO2-Si structures: B S Panwar and A B Bhattacharyya,Centre for Applied Research in Electronics, IndianInstitute of Technology, Hauz-Khas, New Delhi-110016, India


Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
141 KB
Volume
39
Category
Article
ISSN
0042-207X

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