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The critical charge density of 4H-SiC thyristors

✍ Scribed by Levinshtein, M.E.; Palmour, J.W.; Rumyanetsev, S.L.; Singh, R.


Book ID
114537190
Publisher
IEEE
Year
1998
Tongue
English
Weight
304 KB
Volume
45
Category
Article
ISSN
0018-9383

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The Charge Collection Efficiency (CCE) in 4H-SiC epitaxial Schottky diodes is studied as a function of the applied reverse bias. Three SiC types, with different doping concentrations, were used to detect 12 C ions at 14.2, 28.1 and 37.6 MeV. In two SiC types we observe minority charge carriers, gene