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Investigation of ferromagnetism in Al-doped 4H–SiC by density functional theory

✍ Scribed by Lin Yu; Hao Jin; Donghong Liu; Ying Dai; Meng Guo; Baibiao Huang; Zhenkui Zhang

Book ID
108109208
Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
827 KB
Volume
496
Category
Article
ISSN
0009-2614

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From the temperature dependence of the hole concentration in lightly Al-doped 4H-SiC epilayers, a shallow acceptor with E V þ 0:2 eV, which is an Al atom ðAl Si Þ at a Si sublattice site, and an unknown deep defect with E V þ 0:35 eV are found, where E V is the valence band maximum. In unirradiated