The correlation between preferred orientation and performance of ITO thin films
โ Scribed by Yao Chen; Yuqin Zhou; Qunfang Zhang; Meifang Zhu; Fengzhen Liu
- Publisher
- Springer US
- Year
- 2007
- Tongue
- English
- Weight
- 169 KB
- Volume
- 18
- Category
- Article
- ISSN
- 0957-4522
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๐ SIMILAR VOLUMES
Aluminium-nitride films were prepared on glass substrates by reactive radio frequency (r.f.) magnetron sputtering in argon/nitrogen gas mixtures containing 25 --~ 75% nitrogen at substrate temperatures below 150 ยฐC. It is important to control the crystallographic orientation and the surface morpholo
are considerably under-estimated. This difficulty must be understood before defect structure calculations can be carried out adequately for graphite. The Morse potential yields a much larger anharmonic coefficient than is deduced from thermal expansion measurements.
This paper deals with experimental design applied to response surface methodology (RSM) in order to determine the influence of the discharge conditions on preferred c-axis orientation of sputtered AlN thin films. The thin films have been deposited by DC reactive magnetron sputtering on Si (1 0 0) su